Internship Title: GaN Characterization Intern
Location: San Jose
Role Description:
Internship Summary, Responsibilities, and Deliverables:
Intern would be responsible for executing experiments including
- static/dynamic characterization of discrete or cascode GaN devices
- TDDB-based lifetime study and
- data analysis and interpretation
Deliverable would be a concise report including key comparison charts and tables that the team can use as part of customer communications.
Qualifications & Requirements
Required Skills:
Preferred Skills: Hands on experience with static and dynamic characterization of semiconductor power device
Education Level: MS/PhD student
Field(s) of Study: Semiconductor device physics, GaN, Reliability, WBG applications