UST
Website:
ust.com
Job details:
Job Title: Memory Design Engineer
Experience: 3–8 Years
Location: Bengaluru
Job Summary
We are looking for a Memory Design Engineer with strong fundamentals in advanced-node memory design. The ideal candidate will have hands-on experience in SRAM design, modeling, verification, and circuit design, with exposure to cutting‑edge foundry technologies. Experience with Samsung Foundry is mandatory.
Key Responsibilities
- Design and development of high‑performance SRAM and memory circuits at advanced technology nodes.
- Memory circuit design, modeling, and verification across multiple process corners.
- Work on advanced foundry nodes (2nm / 3nm / 4nm); experience on lower nodes is highly preferred.
- Perform detailed circuit simulations, analysis, and debugging to meet PPA targets.
- Collaborate with foundry, layout, and verification teams to ensure robust memory design sign‑off.
- Contribute to design reviews and drive solutions based on strong design fundamentals.
Required Skills & Qualifications
- 3–8 years of hands-on experience in Memory Design.
- Strong expertise in SRAM design, memory modeling, verification, and circuit design.
- Solid understanding of advanced CMOS design concepts and deep‑submicron effects.
- Proven experience working with Samsung Foundry (mandatory).
- Exposure to 2nm / 3nm / 4nm technology nodes; lower-node experience is strongly preferred.
- Strong problem‑solving skills with a solid grasp of analog and digital circuit fundamentals.
Click on Apply to know more.